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Sun, 19 Feb 2012, 12:27am yet another proposal for high energy density capacitors... »
Daniel R Plante
Registered: Apr, 2009
Last visit: Thu, 04 Apr 2013
Posts: 1185

Y_Po wrote:

Daniel R Plante wrote:

then the empirical breakdown difference measured between thick and thin layers would vanish.

Idiot, no, they would not. Breakdown is caused by avalanche ionization of dielectric. Nano-thin dielectrics don't have avalanche ionization because there is not enough voltage in them.
Instead nano-thin capacitors start leaking current at few volts due to quantum tunneling.
And record achieved for nano-thin-film is 3000 Volt/um.

Nope. Regardless of thickness, tunneling current, etc - if "breakdown" occurs, it would have had to start at some point of nucleation. What is the nucleation point?
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