Hot off my Inbox.
"we deposited a 10-nm-thick Al2O3 overlayer by
atomic layer deposition in the atomic layer-by-layer mode at 80 deg C. Thus, trimethylaluminum (TMAl) as Al source and H2O as O source were supplied repeatedly. The Al2O3
overlayer passivated the NO2-adsorbed H-terminated diamond
surface successfully, as described later. The details
of properties of its Al2O3 overlayer will be reported
elsewhere. At present, we estimated a composition ratio of
Al : O of approximately 2 : 3, and critical field strength Ec of at ~7 MV/cm from gate breakdown measurements, and a gate leakage current of 4 x 10^-9 A/mm2, 250 times lower than that of FET with a native oxide."
must be a Wizard "There are some who call me Tim...."
Last edited Fri, 17 Feb 2012, 4:43pm by devotEE
"We're living in a wiggly world."
"11% of any quantity = a shit ton"