TheEEStory.com

Hot off my Inbox.

http://theeestory.com/files/H_terminated_Diamon...

Powerful.

"we deposited a 10-nm-thick Al2O3 overlayer by
atomic layer deposition in the atomic layer-by-layer mode at 80 deg C. Thus, trimethylaluminum (TMAl) as Al source and H2O as O source were supplied repeatedly. The Al2O3
overlayer passivated the NO2-adsorbed H-terminated diamond
surface successfully, as described later. The details
of properties of its Al2O3 overlayer will be reported
elsewhere. At present, we estimated a composition ratio of
Al : O of approximately 2 : 3, and critical field strength Ec of at ~7 MV/cm from gate breakdown measurements, and a gate leakage current of 4 x 10^-9 A/mm2, 250 times lower than that of FET with a native oxide."

must be a Wizard "There are some who call me Tim...."

Last edited Fri, 17 Feb 2012, 4:43pm by devotEE

Hello,
In case you missed it, that is 700 volts/micron with 1/250 of the leakage of an uncoated (no ALD) FET. Yes, thinner layers have a higher specific strength, but that is still impressive. Also note earlier in the paper that the diamond was reported with a specific strength of 1000 volts / micron. Double bonds uber alles. Kind of like CMBT.

I'm not sayin, I'm just sayin...

Nope, I didn't miss it. Thanks for all the very relevant references lately devotEE. I look forward to them :)

Maybe you should email EEventually about this one. He probably already read it, but who knows?